Summary written by USA Jobs 24 from Intel's advert and our data on 17,030 current US jobs. How we check every job
At a glance
Intel is hiring a TD Memory Quality and Reliability PhD Intern in Santa Clara, CA. It is a internship role in Other Roles, open to entry-level candidates, first listed on November 1. The advertised pay is $120,898–$120,902 a year. The description mentions Statistics, Python and Machine learning. Intel has 99 other openings in the US, 26 of them in Santa Clara, CA.
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- Entry-level friendly. The advert is open to people early in their career. Our guide to entry-level jobs covers what to put on a first resume.
- Tailor your resume. Use the advert's own words, such as Statistics, Python and Machine learning, wherever they are true for you. Our resume guide shows how.
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About hiring at Intel
Intel has 100 openings on USA Jobs 24 today across 9 states. Most are in software & IT (45), hardware & chips (15) and operations (11). The biggest locations are Phoenix, AZ (36), Santa Clara, CA (27) and Austin, TX (10). None of them is fully remote, 20% are open to entry-level candidates and 100% show pay. We collect Intel's jobs every day straight from its own careers system (Workday), never from job boards or agencies.
The employer's advert
This is Intel's own description of the job, copied word for word from its careers site. We have not edited it.
Show the full advert from IntelHide the advert785 words
Job Details:
Job Description:
About the Team
The Technology Development (TD) Quality and Reliability organization plays a critical role in enabling the successful deployment of next-generation semiconductor technologies through silicon-based quality, reliability, and technology readiness assessments.
The Memory Quality and Reliability team works closely with Design, Device Engineering, Product Development Engineering (PDE), and Yield organizations to develop, characterize, and certify SRAM, Register File (RF), and Fuse technologies for advanced process nodes. The team supports key technology certification and PDK release milestones through memory characterization, silicon data analysis, predictive modeling, and risk assessment.
Role Overview
As a TD Memory Quality and Reliability Intern, you will collaborate with experienced engineers to evaluate advanced memory technologies and help drive technology readiness for future Intel Foundry process nodes. This role offers hands-on experience in memory characterization, silicon data analytics, statistical modeling, and semiconductor technology development.
You will contribute to projects that support technology certification decisions by analyzing silicon data, developing predictive models, and assessing memory performance across various operating conditions.
Responsibilities
Responsibilities may include, but are not limited to:
- Analyze silicon characterization data from SRAM, Register File (RF), and Fuse memory test structures to identify performance trends, variability, and potential risks.
- Support memory characterization activities across voltage, temperature, and process conditions.
- Perform data analysis, visualization, and reporting using Python, JMP, or similar analytical tools.
- Develop and enhance statistical models for Vmin/Vmax prediction and technology readiness assessments.
- Support Silicon-to-Simulation (Sil2Sim) correlation studies and memory characterization methodologies.
- Generate technical reports and contribute to technology certification reviews.
- Collaborate with cross-functional teams including Design, Device Engineering, Process Integration, Product Development Engineering, and Yield Engineering.
- Assist with risk assessment activities and technology certification milestones.
- Present data-driven findings and recommendations to engineering teams and project stakeholders.
Qualifications:
Minimum Qualifications
- Currently pursuing a Ph.D. in Electrical Engineering or a related field.
- Basic knowledge of semiconductor devices, microelectronics, or integrated circuit design.
- Programming or scripting experience using Python or similar languages.
- Experience analyzing technical, scientific, or research data through academic projects, research activities, or previous internships.
- Strong academic performance with a cumulative GPA of 3.0 or higher required.
Preferred Qualifications
Coursework, research, or experience in one or more of the following areas:
- SRAM or memory technologies
- Semiconductor device physics
- VLSI design
- Statistics, machine learning, or data science
- Semiconductor process technology
Experience with:
- Python, Pandas, and NumPy
- JMP or other statistical analysis tools
- Data visualization and statistical modeling techniques
- Large-scale data analysis and predictive modeling
Additional experience in memory architectures, silicon characterization, reliability assessment, or semiconductor test methodologies is highly desirable.
What You Will Learn
During this internship, you will gain exposure to:
- Advanced SRAM, RF, and Fuse memory technologies
- Memory characterization and certification methodologies
- Silicon data analytics and statistical modeling techniques
- Vmin/Vmax evaluation and predictive model development
- Technology qualification and certification processes
- Cross-functional semiconductor technology development workflows
- Silicon-based decision making for technology readiness and risk assessment
Job Type:
Student / InternShift:
Shift 1 (United States of America)Primary Location:
US, California, FolsomAdditional Locations:
US, California, Santa Clara, US, Oregon, HillsboroPosting Statement:
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.Position of Trust
N/ABenefits
We offer a total compensation package that ranks among the best in the industry. It consists of competitive pay, stock bonuses, and benefit programs which include health, retirement, and vacation. Find out more about the benefits of working at Intel.
Annual Salary Range for jobs which could be performed in the US: $120,898.00-120,902.00 USDThe range displayed on this job posting reflects the minimum and maximum target compensation for the position across all US locations. Our standard internship rates are based on your degree, location, and the job role. Your recruiter can share more about the specific compensation range for your preferred location and job role during the hiring process.Work Model for this Role
This role will be eligible for our hybrid work model which allows employees to split their time between working on-site at their assigned Intel site and off-site. * Job posting details (such as work model, location or time type) are subject to change.*
ADDITIONAL INFORMATION: Intel is committed to Responsible Business Alliance (RBA) compliance and ethical hiring practices. We do not charge any fees during our hiring process. Candidates should never be required to pay recruitment fees, medical examination fees, or any other charges as a condition of employment. If you are asked to pay any fees during our hiring process, please report this immediately to your recruiter.USA Jobs 24 copied this listing from Intel's official careers site on November 1, 2026 and checked it again November 4, 5:17 AM ET. Intel will never ask you to pay to apply or to buy equipment with a check they send you. If anyone does, it is a scam.
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